AP9962GM Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

25
20
T _A =25 ^o C
15
10V
8.0V
5.0V
4.0V
10
5
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I_D=7A
T _A =25 ^o C
30
25
20
15
3
4
5
6
7
8
9
10
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =150 ^o C
1
T _j =25 ^o C
0.1
0.01
0
0.4
0.8
1.2
1.6
V _SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9962GM
25
T _A =150 ^o C
20
15
10V
8.0V
5.0V
4.0V
10
V _G =3.0V
5
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =7A
1.6 ^{V G =10V}
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3