AP9960M Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9960M
36
10V
T _C =25 ^o C
6.0V
5.0V
4.5V
24
V _GS =4.0V
12
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
32
T _C =150 ^o C
10V
6.0V
5.0V
4.5V
24
V _GS =4.0V
16
8
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
80
I _D =7.0A
T _C =25 ℃
60
40
20
0
2
4
6
8
10
12
V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
2
I _D =7.0A
V _GS =10V
1.4
0.8
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature