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AP9952GP-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
200
T C = 25 o C
160
120
80
40
10V
8.0V
7.0V
6.0V
V GS =5.0V
0
0
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
30
20
T j =150 o C
10
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9952GP-HF
120
T C = 150 o C
10V
8.0V
100
7.0V
80
6.0V
60
40
V GS =5.0V
20
0
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =30A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3