AP9920GEO Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

30
T _A =25 ^o C
5.0 V
4.5 V
3.5 V
2.5 V
20
V _G = 1.5 V
10
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
210
170
I _D = 2A
T _A =25 ^o C
130
90
50
10
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
30
T _A =150 ^o C
20
10
AP9920GEO
5.0 V
4.5 V
3.5 V
2.5 V
V _G = 1.5 V
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I _D = 4A
1.5
V _G = 4.5V
1.1
0.7
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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