AP9620GM Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9620GM
120
T _C =25 ^o C
90
60
30
-10V
-8.0V
-6.0V
V _GS =-4.0V
0
0
2
4
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
T _C =150 ^o C
80
60
40
20
-10V
-8.0V
-6.0V
V _GS =-4.0V
0
0
2
4
6
8
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
40
I _D =-9.5A
35
T _C =25 ℃
30
25
20
15
1
2
3
4
5
6
-V _GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.6
I _D =-9.5A
V _GS =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature