AP9620AGM-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Lower On-resistance

40
T _A = 25 ^o C
-5.0V
-4.5V
-3.5V
30
-2.5V
V _G = - 2.0V
20
10
0
0
1
2
3
4
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
28
I _D = -6 A
26
T _A =25 ℃
24
22
20
18
16
1
2
3
4
5
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T _j =150 ^o C
2
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9620AGM-HF
40
T _A = 150 ^o C
30
20
-5.0V
-4.5V
-3.5V
-2.5V
V _G = - 2.0V
10
0
0
1
2
3
4
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D = -9 A
1.8 _{V G =- 4.5 V}
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I _D =-250uA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3