AP9575GS-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

50
T _C =25 ^o C
40
30
-10V
-7.0V
-5.0V
-4.5V
20
10
V _G =-3.0V
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
I _D = -8 A
T _C =25 ^o C
80
70
60
50
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.0
8.0
6.0
4.0
T _j =150 ^o C
T _j =25 ^o C
2.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9575GS/P-HF
40
T_C=150^oC
30
20
-10V
-7.0V
-5.0V
-4.5V
10
V _G =-3.0V
0
0
2
4
6
8
10
12
14
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D = -10 A
1.8 _{V G = - 10V}
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3