AP9565AGJ Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic

60
T _C = 25 ^o C
50
40
-10V
-7.0V
-5.0V
-4.5V
30
V _G = -3.0 V
20
10
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I _D = -12 A
46
T _C =25 ℃
42
38
34
30
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
T _j =25 ^o C
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
40
T _C = 150 ^o C
30
20
AP9565AGH/J
-10V
-7.0V
-5.0V
-4.5V
V _G = -3.0 V
10
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =-12A
V _G =-10V
1.5
1.2
0.9
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3