AP9478GM Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

40
35
T _A = 25 ^o C
30
25
10V
7.0 V
5.0V
4.5V
20
15
10
V _G =3.0V
5
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I_D=3A
T _A =25 ℃
65
60
55
50
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9478GM
35
30
T _A = 150 ^o C
25
20
10V
7.0V
5.0V
4.5V
15
10
5
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I_D=4A
1.6
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.5
1.2
0.9
0.6
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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