AP9470GM-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement

40
T _A = 25 ^o C
30
10 V
7.0 V
6.0 V
5.0 V
V _G =4.0V
20
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I_D=6A
T _A =25 ℃
30
25
20
15
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
T _j =150 ^o C
T _j =25 ^o C
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9470GM-HF
40
T _A = 150 ^o C
10 V
7.0 V
6.0 V
30
5.0 V
V _G =4.0V
20
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I _D = 10 A
V _G =10V
1.4
0.9
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3