AP9469GM Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Fast Switching Characteristic

20
15
T _A = 25 ^o C
10
10V
7.0V
5.0V
4.5V
5
V _G =3.0V
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
145
I_D=3A
T _A =25 ℃
105
65
25
3
5
7
9
11
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T _j =150 ^o C
T _j =25 ^o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9469GM
20
10V
7.0V
5.0V
15
4.5V
T _A = 150 ^o C
10
V _G =3.0V
5
0
0
2
4
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I_D=5A
V _G =10V
1.4
0.9
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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