AP9468GJ Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

240
T _C =25 ^o C
10V
7.0 V
200
5.0V
4.5 V
160
120
V _G = 3.0 V
80
40
0
0.0
2.0
4.0
6.0
8.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
I _D =30A
T _C =25 ^o C
7
6
5
4
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
T _j =150 ^o C
T _j =25 ^o C
30
20
10
0
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9468GH/J
240
T _C =150 ^o C
10V
7 .0V
200
5.0V
4.5 V
160
120
V _G =3.0V
80
40
0
0.0
2.0
4.0
6.0
8.0
10.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =45A
V _G =10V
1.6
1.2
0.8
0.4
25
50
75
100
125
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8.0
7.0
V _GS =4.5V
6.0
V _GS =10V
5.0
4.0
0
20
40
60
I _D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
80
3