AP9466GJ Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

150
T _C =25 ^o C
120
10V
7.0V
90
5.0V
4.5V
60
30
V _G =3.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I _D =26A
T _C =25 ^o C
16
12
8
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
25
20
15
T _j =150 ^o C
10
T _j =25 ^o C
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
80
T _C =150 ^o C
60
40
AP9466GH/J
10V
7.0V
5.0V
4.5V
20
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.2
I _D =26A
V _G =10V
1.8
1.4
1.0
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3