AP9465AGJ Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

50
T _C =25 ^o C
40
30
10V
7.0 V
5.0V
4.5 V
20
V _G = 3.0 V
10
0
0.0
1.0
2.0
3.0
4.0
5.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
I _D =12A
T _C =25 ^o C
36
32
28
24
20
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
T _j =25 ^o C
8
4
0
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
40
T _C =150 ^o C
30
20
10
AP9465AGH/J
10V
7 .0V
5.0V
4.5 V
V _G =3.0V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =12A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3