AP9450GMT-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, SO-8 Compatible with Heatsink

160
T _C =25 ^o C
10V
7.0V
6.0V
120
5.0V
V _G = 4.0V
80
40
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.2
I _D = 20 A
4.8
T _C =25 ^o C
4.4
4.0
3.6
3.2
2.8
2.4
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
T _j =25 ^o C
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9450GMT-HF
120
T _C = 150 ^o C
10V
7.0V
100
6.0V
5.0V
80
V _G = 4.0V
60
40
20
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =20A
V _G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I _D =250uA
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3