AP9435GH Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

80
T _C =25 ^o C
60
-10V
-8.0V
-6.0V
40
-4.5V
20
V _G =-4.0V
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
I _D =-10A
T _C =25 ℃
80
70
60
50
40
30
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
AP9435GH/J
70
T _C =150 ^o C
60
50
-10V
-8.0V
40
-6.0V
30
-4.5V
20
V _G =-4.0V
10
0
0
2
4
6
8
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =-10A
1.6
V _G =-10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.8
1.6
1.4
1.2
1
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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