AP9431GH-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

60
T _C =25 ^o C
50
40
10V
7.0V
6.0V
5.0V
30
V _G = 4.0 V
20
10
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I _D =12A
T _C =25 ^o C
40
30
20
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
8
T _j =175 ^o C
T _j =25 ^o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9431GH-HF
50
T _C =175 ^o C
40
30
10V
7.0V
6.0V
5.0V
V _G =4.0V
20
10
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =18A
V _G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3