AP9418GM_14 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

60
T _A =25 ^o C
10V
7.0 V
50
6.0 V
5.0 V
40
V _G = 4.0 V
30
20
10
0
0
0
0
1
1
1
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
I _D = 12 A
T _A =25 ℃
5
4
3
2
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
8
T _j =25 ^o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9418GM
40
T _A = 150 ^o C
10V
7.0 V
6.0 V
30
5.0 V
V _G = 4 .0 V
20
10
0
0
0
1
1
2
2
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D = 16 A
V _G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3