AP9412GP Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Simple Drive Requirement

250
T _C = 25 ^o C
200
150
100
10 V
7.0 V
5.0 V
4.5 V
V _G = 3.0 V
50
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I _D =30A
T _C =25 ^o C
10
8
6
4
2
4
6
8
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9412GP
120
T _C = 1 75 ^o C
10V
7.0V
100
5.0V
4.5V
80
V _G = 3.0 V
60
40
20
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =40A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3