AP9410GMT-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

160
T _C =25 ^o C
120
5.0V
4.5V
3.5V
2.5V
80
V _G = 2.0 V
40
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
I _D =20A
T _C =25 ^o C
8
6
4
2
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
T _j =150 ^o C
T _j =25 ^o C
30
20
10
0
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9410GMT-HF
120
T _C =150 ^o C
5.0V
4.5V
100
3.5V
2.5V
80
V _G =2.0V
60
40
20
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =20A
V _G =4.5V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3