AP9410AGM-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

160
T _A =25 ^o C
120
5.0V
4.5V
3.5V
2.5V
80
V _G =2.0V
40
0
0.0
4.0
8.0
12.0
16.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
I _D =6A
T _A =25 ^o C
8
6
4
2
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
20
T _j =150 ^o C
T _j =25 ^o C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9410AGM-HF
120
T _A =150 ^o C
100
80
5.0V
4.5V
3.5V
2.5V
V _G = 2.0V
60
40
20
0
0
2
4
6
8
10
12
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =12A
1.6 ^{V G =10V}
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3