AP9120GJ-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

20
T _C =25 ^o C
16
12
-10V
-8.0V
-7.0V
-6.0V
8
V _G = - 5.0V
4
0
0
4
8
12
16
20
24
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
700
I _D = -4 A
T _C =25 ℃
660
620
580
540
500
4
5
6
7
8
9
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T _j =150 ^o C
2
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP9120GH/J-HF
12
T_C=150^oC
10
8
-10V
-8.0V
-7.0V
-6.0V
6
V _G = -5.0V
4
2
0
0
4
8
12
16
20
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =- 4 A
V _G =-10V
1.9
1.4
0.9
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3