AP90T03GJ Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Lower On- resistance, Simple Drive Requirement

200
T _C =25 ^o C
160
120
80
10V
7.0V
5.0V
4.5V
V _G =3.0V
40
0
0
1
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
I _D =20A
T _C =25 ^o C
4.5
4.0
3.5
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
15
T _j =150 ^o C
T _j =25 ^o C
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP90T03GH/J
160
140 ^{T C = 1 50 o C}
120
100
10V
7.0V
5.0V
4.5V
V _G =3.0V
80
60
40
20
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D = 45 A
1.8 _{V G =10V}
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3