AP90T03GI Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Performance, Single Drive Requirement

200
T _C =25 ^o C
160
120
10V
7.0V
5.0V
4.5V
V _G =3.0V
80
40
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
I _D = 20 A
T _C =25 ^o C
4.6
4.2
3.8
3.4
3
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
T _j =150 ^o C
T _j =25 ^o C
12
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP90T03GI
160
T _C =150 ^o C
120
80
10V
7.0V
5.0V
4.5V
V _G =3.0V
40
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =45A
V _G =10V
1.6
1.2
0.8
0.31
t_rr
0.4
-50
0
50
100
Q 150
rr
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3