AP86T03GH Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement

250
T _C =25 ^o C
200
150
100
50
10V
7.0 V
6.0V
5.0 V
V _G = 4.0 V
0
0.0
1.0
2.0
3.0
4.0
5.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I _D =30A
T _C =25 ^o C
10
8
6
4
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =175 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP86T03GH/J
120
T _C =175 ^o C
10V
7 .0V
100
6.0V
5.0 V
80
60
V _G =4.0V
40
20
0
0.0
2.0
4.0
6.0
8.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =45A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3