AP85T10AGP-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

300
T _C =25 ^o C
250
10V
9.0V
8.0V
7.0V
200
V _G = 6.0V
150
100
50
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
I _D =1mA
1.1
1
0.9
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP85T10AGP-HF
160
T _C =150 ^o C
10V
9.0V
8.0V
120
7.0V
V _G =6.0V
80
40
0
0
2
4
6
8
10
12
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =40A
V _G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3