AP85T08GSP-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

250
10V
T _C = 25 ^o C
7.0 V
200
150
5.0V
100
4.5V
50
V _G =3.0V
0
0
3
6
9
12
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
14
I _D =20A
T _C =25 ^o C
13
12
11
10
2
4
6
8
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
50
40
30
T _j =150 ^o C
20
T _j =25 ^o C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP85T08GS/P-HF
120
T _C = 150 ^o C
10V
7.0 V
5.0V
90
4.5V
60
30
V _G =3.0V
0
0
3
6
9
12
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =45A
V _G =10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3