AP83T03AGH-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic

200
T _C =25 ^o C
160
120
10V
7.0V
6.0V
5.0V
V _G = 4.0V
80
40
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
I _D =30A
T _C =25 ^o C
7
6
5
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP83T03AGH-HF
120
T _C =150 ^o C
10V
7.0V
100
6.0V
5.0V
80
V _G =4.0V
60
40
20
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =40A
V _G =10V
1.6
+20
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I _D =250uA
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3