AP80T10GR-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

250
T _C = 25 ^o C
10V
9.0V
200
8.0V
7.0V
150
V _G = 6.0V
100
50
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
40
30
20
T _j =175 ^o C
10
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP80T10GR-HF
160
T _C = 1 75 ^o C
120
80
10V
9.0V
8.0V
7.0V
V _G = 6.0V
40
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I _D =40A
2.4 ^{V G =10V}
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
200
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3