AP78T10GP-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

240
T _C = 25 ^o C
10V
200
8.0V
160
7.0V
120
80
6.0V
40
V _G = 5.0V
0
0
8
16
24
32
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 3. Normalized BV_DSS v.s. Junction
Temperature
40
30
20
T _j =150 ^o C
10
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP78T10GP-HF
120
T _C = 150 ^o C
10V
8.0V
100
7.0V
80
6.0V
60
40
V _G = 5.0V
20
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =30A
V _G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3