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AP75T10BGP-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
250
T C = 25 o C
200
150
100
10V
6.0 V
5.0V
4.5V
V G =3.0V
50
0
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
13
I D =30A
T C =25 o C
12
11
10
9
2
4
6
8
10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
45
30
T j =150 o C
15
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP75T10BGP-HF
120
T C = 150 o C
100
80
60
10V
6.0V
5.0V
4.5V
V G =3.0V
40
20
0
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =30A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3