AP72T03GP Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

200
T _C =25 ^o C
160
120
10V
7.0V
6.0V
80
5.0V
40
V _G = 4.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I _D =15A
T _C =25 ℃
14
12
10
8
6
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T _j =175 ^o C
10
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
160
T _C =175 ^o C
120
80
40
AP72T03GP
10V
7.0V
6.0V
5.0V
V _G = 4.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =30A
V _G =10V
1.4
1
0.6
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.2
0.6
0.0
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3