AP70T03GS Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low Gate Charge

200
T _C =25 ^o C
150
100
10V
8.0V
6.0V
50
V _G =4.0V
0
0.0
1.5
3.0
4.5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I _D =20A
T _C =25 ℃
40
20
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =175 ^o C
1
T _j =25 ^o C
0.1
0
0.5
1
1.5
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
120
T _C =175 ^o C
90
AP70T03GS/P
10V
8.0V
6.0V
60
30
V _G =4.0V
0
0.0
1.5
3.0
4.5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
1.6
I _D =33A
V _G =10V
1.4
1.2
1.0
0.8
0.6
-50
25
100
175
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2.1
1.7
1.3
0.9
-50
25
100
175
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3