AP6970GN2-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge

30
T _A = 25 ^o C
20
10
5.0V
4.5V
3.5V
2.5V
V _G = 2.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I_D=3A
T _A =25 ℃
60
50
40
30
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
1
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6970GN2-HF
20
T _A = 150 ^o C
5.0V
4.5V
16
3.5V
2.5V
12
8
V _G = 2.0V
4
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I_D=4A
V _G = 4.5 V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3