AP6679GS-A-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

200
T _C =25 ^o C
160
120
-10V
-7.0V
-5.0V
-4.5V
80
V _G = -3.0V
40
0
0
2
4
6
8
10
12
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I _D = -20A
18
T _C =25 ℃
16
14
12
10
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
50
40
30
T _j =150 ^o C
T _j =25 ^o C
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6679GS/P-A-HF
120
-10V
T _C =150 ^o C
-7.0V
-5.0V
90
-4.5V
60
V _G = -3.0V
30
0
0.0
2.0
4.0
6.0
8.0
10.0
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D = -28A
V _G = -10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3