AP6679GR Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Lower On-resistance, Simple Drive Requirement

280
240
T _C =25 ^o C
200
160
120
-10V
-8.0V
-6.0V
-4.5V
80
40
V _G =-3.0V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
15
I _D = -24A
T _C = 25 ℃
13
11
9
7
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
75
60
45
T _j =150 ^o C
T _j =25 ^o C
30
15
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
150
T _C =150 ^o C
100
AP6679GR
-10V
-8.0V
-6.0V
-4.5V
50
V _G = -3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = -30A
V _G = -10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.6
1.4
1.2
1
0.8
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3