AP6679BGM-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP6679BGM-HF
50
T _A = 25 ^o C
- 10 V
- 7.0 V
40
- 6.0 V
- 5.0 V
V _G = - 4.0 V
30
20
10
0
0
0
1
1
2
2
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T _A = 150 ^o C
40
30
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V _G = - 4.0 V
20
10
0
0
0
1
1
2
2
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
14
I_D=-8A
T _A =25 ℃
12
10
.
8
6
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
2.0
I _D = - 13 A
1.8 _{V G =-10V}
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
16
2.2
12
1.8
T _j =150 ^o C
T _j =25 ^o C
8
1.4
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3