AP65PN1R4I Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP65PN1R4I
16
T _C =25 ^o C
12
8
4
10V
8.0V
7.0V
V _G =6.0V
8
T _C =150 ^o C
6
4
2
10V
9.0V
8.0V
7.0V
0.37Ω ^6.0V
V _G =5.0V
0
0
10
20
30
40
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.6
I _D =2.5A
T _C =25 ^o C
2.2
0
0
8
16
24
32
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
4
I _D =2.5A
V _G =10V
3
1.8
.
2
1.4
1
1
5
6
7
8
9
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j = 150 ^o C
T _j = 25 ^o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I _D =250uA
1.6
1.2
0.8
0.4
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3