AP60U02GH Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low On-resistance

150
T _C =25 ^o C
120
90
60
10V
7.0V
5.0V
4.5V
30
V _G =3.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I _D = 16 A
T _C =25 ℃
18
16
14
12
10
8
2
4
6
8
10
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T _j =175 ^o C
T _j =25 ^o C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP60U02GH
100
T _C =175 ^o C
80
60
10V
7.0V
5.0V
4.5V
40
20
V _G =3.0V
0
0
1
2
3
4
5
6
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =24A
V _G =10V
1.4
1
0.6
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.2
0.6
0.0
-50
0
50
100
150
200
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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