AP60T03GP Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low Gate Charge

125
100 ^{T C =25 o C}
75
50
10V
8.0V
6.0V
5.0V
25
V _G =4.0V
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
I _D =15A
60
T _C =25 ℃
40
20
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T _j =175 ^o C
1
T _j =25 ^o C
0.1
0
0.5
1
1.5
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP60T03GS/P
90
T _C =175 ^o C
60
10V
8.0V
6.0V
5.0V
30
V _G =4.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I _D =20A
V _G =10V
1.6
1.2
0.8
0.4
-50
25
100
175
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2
1
0
-50
25
100
175
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3