AP5600N Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP5600N
12
T _A = 25 ^o C
5.0V
4.5V
10
4.0V
3.5V
8
3.0V
2.5V
6
V _G = 2.0V
4
2
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T _A = 150 ^o C
5.0V
4.5V
8
4.0V
3.5V
3.0V
6
2.5V
V _G = 2.0V
4
2
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
150
I _D =1A
T _A =25 ^o C
130
110
.
90
70
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
T _j =25 ^o C
4
2
2.8
I_D=2A
V _G = 4.5 V
2.4
2.0
1.6
1.2
0.8
0.4
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =250uA
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3