AP55T06GS-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Lower On-resistance

120
T _C = 25 ^o C
100
10V
7.0V
6.0V
80
5.0V
60
V _GS =4.0V
40
20
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
28
I _D =16A
T _C =25 ^o C
24
20
16
12
2
4
6
8
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
T _j =25 ^o C
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP55T06GS-HF
100
T _C = 150 ^o C
80
60
40
10V
7.0V
6.0V
5.0V
V _GS =4.0V
20
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
I _D =24A
2.6 V _G =10V
2.2
1.8
1.4
1.0
0.6
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I _D =250uA
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3