AP50T10GS-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

100
T _C = 25 ^o C
10V
7.0V
80
6.0V
60
5.0V
40
V _G = 4.0V
20
0
0
4
8
12
16
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I _D =16A
T _C =25 ^o C
60
50
40
30
20
2
4
6
8
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T _j =150 ^o C
T _j =25 ^o C
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP50T10GS-HF
80
T _C = 150 ^o C
60
40
20
10V
7.0V
6.0V
5.0V
V _G = 4.0V
0
0
4
8
12
16
20
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D =24A
V _G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I _D =250uA
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3