AP50T10GM-HF_14 Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Single Drive Requirement

40
T _A =25 ^o C
30
10V
7.0V
6.0V
5.0V
20
V _G =4.0V
10
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I _D =4A
T _A =25 ^o C
50
40
30
20
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP50T10GM-HF
40
T _A =150 ^o C
30
20
10V
7.0V
6.0V
5.0V
V _G =4.0V
10
0
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I_D=6A
2.0 ^V G ^=10V
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I _D =1mA
1.6
1.2
0.8
0.4
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3