AP4963GEM-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Lower Gate Charge

40
T _A =25 ^o C
-10V
-7.0V
-6.0V
30
-5.0V
20
V _G = -4.0V
10
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I _D =-4A
T _A =25 ℃
60
50
40
30
20
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
5
4
T _j =150 ^o C
3
T _j =25 ^o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4963GEM-HF
40
T _A =150 ^o C
-10V
-7.0V
-6.0V
30
-5.0V
20
V _G = -4.0V
10
0
0
2
4
6
8
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D =-6A
V _G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3