AP4951GM-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement, Low Gate Charge, Fast Switching Performance

40
T _A =25 ^o C
30
-10V
-7.0V
-5.0V
-4.5V
20
V _G =-3.0V
10
0
0
2
4
6
8
10
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I _D = -2.7A
T _A =25 ℃
90
80
70
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.00
8.00
T _j =150 ^o
T _j =25 ^o C
6.00
C
4.00
2.00
0.00
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
30
T _A =150 ^o C
20
10
AP4951GM-HF
-10V
-7.0V
-5.0V
-4.5V
V _G =- 3 .0V
0
0
2
4
6
8
10
12
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I _D = -3.4A
V _G = -10V
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3