AP4835GM-HF_16 Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP4835GM-HF
50
T _A =25 ^o C
-10V
-7.0V
40
-5.0V
-4.5V
30
V _G =-3.0V
20
10
0
0
1
2
3
4
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T _A =150 ^o C
-10V
-7.0V
-5.0V
40
-4.5V
30
V _G =-3.0V
20
10
0
0
2
4
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
30
I _D =-6A
T _A =25 ^o C
26
1.7
I _D =-9A
V _G =-10V
1.3
22
.
18
0.9
14
10
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0.1
0.3
0.5
0.7
0.9
1.1
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.5
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3