AP2605GY0-HF Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic, Lower Gate Charge

20
T _A =25 ^o C
-10V
-7.0V
16
-6.0V
-5.0V
V _G = -4.0V
12
8
4
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
TI ^DA==TI-23DA5A==^o-2C45.2o^AC
70
60
50
40
0
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
2
T _j =150 ^o C
T _j =25 ^o C
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP2605GY0-HF
20
T_A=150^oC
-10V
-7.0V
16
-6.0V
-5.0V
65mΩ^{V G = -4.0V}
12
8
4
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D = -4A
1.6 ^V GS ^{= -10V}
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
I _D = -250uA
1
0.5
2.01E+08
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3