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| AP2532GY_14 Datasheet, PDF (3/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance | |||
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AP2532GY
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
VGS=-10V, ID=-0.6A
VGS=-4.5V, ID=-0.3A
-30 -
-
V
-
- 250 mΩ
-
- 400 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1.2 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-1A
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=-30V, VGS=0V
VDS=-24V ,VGS=0V
IGSS
Gate-Source Leakage
Qg
Total Gate Charge2
VGS=±20V
ID=-1.2A
Qgs
Gate-Source Charge
VDS=-10V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-15V
tr
Rise Time
ID=-0.6A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
tf
Fall Time
RD=25Ω
Ciss
Input Capacitance
VGS=0V
Coss
Output Capacitance
VDS=-10V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate Resistance
f=1.0MHz
- 1.7 -
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 2.5 4 nC
-
1
- nC
-
1
- nC
-
6
- ns
-
9
- ns
- 18 - ns
-
4
- ns
- 175 280 pF
- 63 - pF
- 45 - pF
- 10 15 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-0.9A, VGS=0V
IS=-1.2A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Unit
-
- -1.3 V
- 14 - ns
-
6
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180â/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
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