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AP2531GY-HF_14 Datasheet, PDF (3/7 Pages) Advanced Power Electronics Corp. – Low Gate Charge Drive
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AP2531GY-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-16 -
-
V
RDS(ON)
Static Drain-Source On-Resistance VGS=-4.5V, ID=-2A
-
- 125 mΩ
VGS=-2.5V, ID=-1.6A
-
- 165 mΩ
VGS=-1.8V, ID=-1A
-
- 210 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.2 - -1 V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-12V ,VGS=0V
IGSS
Gate-Source Leakage
Qg
Total Gate Charge2
VGS=+8V, VDS=0V
ID=-2A
Qgs
Gate-Source Charge
VDS=-10V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-10V
tr
Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf
Fall Time
VGS=-5V
Ciss
Input Capacitance
VGS=0V
Coss
Output Capacitance
VDS=-10V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate Resistance
f=1.0MHz
-
5
-
S
-
-
-1 uA
-
- -25 uA
-
- +100 nA
-
6 10 nC
- 0.8 - nC
-
2
- nC
-
7
-
ns
- 20 - ns
- 23 - ns
- 24 - ns
- 380 610 pF
- 90 - pF
- 75 - pF
-
8 12 Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=-0.9A, VGS=0V
Min. Typ. Max. Unit
-
- -1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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